?004 fairchild semiconductor corporation 1 www.fairchildsemi.com ja n uary 2005 RMPA2455 rev. d RMPA2455 2.4?.5 ghz 1 watt ingap hbt linear power ampli?r RMPA2455 2.4?.5 ghz 1 watt ingap hbt linear power ampli?r features 30 db small signal gain 30 dbm output power @ 1 db compression 3% evm at 22 dbm modulated power out 5.0 v positive collector supply operation tw o power saving shutdown options (bias and logic control) integrated power detector with 20 db dynamic range low pro?e 16 pin 3 x 3 x 0.9 mm leadless package internally matched to 50 ? and dc blocked rf input/output optimized for use in 802.11b/g access point applications general description the RMPA2455 power amplifier is designed for high performance wlan access point applications in the 2.4?.5 ghz frequency band. the low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and output to 50 ? minimizes next level pcb space and allows for simplified integration. the on-chip detector provides power sensing capability while the logic control provides power saving shutdown options. the pa? low power consumption and excellent linearity are achieved using our ingap heterojunction bipolar transistor (hbt) technology. device electrical characteristics 1 802.11g ofdm modulation (with 176 ms burst time, 100 ms idle time) 54 mbps data rate, 16.7 mhz bandwidth notes: 1. vc1, vc2 = 5.0 volts, vm12 = 3.3v, t a = 25?, pa is constantly biased, 50 ? system. 2. percentage includes system noise ?or of evm = 0.8%. 3. p out measured at p in corresponding to power detection threshold. p arameter min typ max units f requency 2.4 2.5 ghz collector supply voltage 4.5 5.0 5.5 v mirror supply voltage 2.8 3.3 3.6 v gain 30 db t otal current @ 22dbm p out 195 ma evm @ 22dbm p out 2 3.0 % detector output @ 22dbm p out 960 mv detector threshold 3 4 dbm
2 www.fairchildsemi.com RMPA2455 rev. d RMPA2455 2.4?.5 ghz 1 watt ingap hbt linear power ampli?r electrical characteristics 1 single tone absolute ratings 6 notes: 1. vc1,vc2 = 5.0v, vm12 = 3.3v, t c = 25?, 50 ? system. 2. mirror bias current is included in the total quiescent current. 3. vl is set to input logic level high for pa off operation. 4. measured from device on signal turn on (logic low) to the point where rf p out stabilizes to 0.5db. 5. load vswr is set to 8:1 and the angle is varied 360 degrees. p out = -30dbm to p1db. 6. no permanent damage with only one parameter set at extreme limit. other parameters set to typical values 7. p out measured at p in corresponding to power detection threshold. p arameter min typ max units f requency 2.4 2.5 ghz collector supply voltage 4.5 5.0 5.5 v mirror supply voltage 2.8 3.3 3.6 v gain 30 db t otal quiescent current 140 ma bias current at pin vm12 2 17 ma p1db compression 30 dbm standby current 3 0.7 ma shutdown current (vm12 = 0v) <1.0 ? input return loss 12 db output return loss 10 db detector output at p1db comp 4 v detector p out threshold 7 6 dbm 2nd harmonic output at p1db -40 dbc 3rd harmonic output at p1db -40 dbc logic shutdown control (v l ): device off, logic high input 2.0 2.4 v device on, logic low input 0.0 0.8 v logic current 150 ? turn-on time 4 <1 ? turn-off time <1 ? spurious (stability) 5 -65 dbc symbol parameter ratings units vc1, vc2 positive supply voltage 6 v ic1, ic2 supply current ic1 ic2 120 700 ma ma vm12 positive bias voltage 4.0 v v l logic voltage 5 v p in rf input power 10 dbm t case case operating temperature -40 to +85 ? t stg storage temperature -55 to +150 ?
3 www.fairchildsemi.com RMPA2455 rev. d RMPA2455 2.4?.5 ghz 1 watt ingap hbt linear power ampli?r functional block diagram voltage detector bias output match 12 8 input match int stg match n/c 11 rf out 10 rf out 9 1 2 3 4 n/c v l rf in rf in n/c vc2 7 vdet 6 n/c 5 13 14 15 16 vm12 n/c n/c n/c vc1 backside ground pin description 1v l (logic) 2 rf in 3 rf in 4 n/c 5 vc1 6 n/c 7 n/c 8 n/c 9 n/c 10 rf out 11 rf out 12 n/c 13 vc2 14 vdet 15 n/c 16 vm12
4 www.fairchildsemi.com RMPA2455 rev. d RMPA2455 2.4?.5 ghz 1 watt ingap hbt linear power ampli?r performance data 802.11g ofdm modulation (with 176 ms burst time, 100 ms idle time) 54 mbps data rate, 16.7 mhz bandwidth total measured evm vs. modulated output power vc1, vc2 = 5.0v, vm12 = 3.3v 0 1 2 3 4 5 6 0 2468 10 12 14 16 18 20 22 24 modulated output power (dbm) tot al measured evm (%) 2.4 ghz 2.45 ghz 2.5 ghz includes 0.8% system level evm to ta l cu rr en t vs. modulated output power vc1, vc2 = 5.0v, vm12 = 3.3v 100 120 140 160 180 200 220 02468 10 12 14 16 18 20 22 24 modulated ou tput power total current (ma) 2.4 ghz 2.45 ghz 2.5 ghz gain vs. modulated output power vc1, vc2=5.0v, vm12=3.3v t=25c 22 23 24 25 26 27 28 29 30 31 02468 10 12 14 16 18 20 22 24 26 28 30 32 modulated output po wer (dbm) gain (db) 2.4 ghz 2.45 ghz 2.5 ghz detector voltage vs. modulated output power vc1, vc2 =5.0v, vm12=3.3v t=25c 0 500 1000 1500 2000 2500 3000 02468 10 12 14 16 18 20 22 24 26 28 30 32 modulated output power (dbm) detector voltage (mv) 2.4 ghz 2.45 ghz 2.5 ghz typical evm vs. modulated power out vc1, vc2=5.0v, vm12 =2.8 to 3.3v f=2.45 ghz t=25c 0 1 2 3 4 5 02468 10 12 14 16 18 20 22 24 modulated output power (dbm) total measured evm (% ) includ es 0.8% system level evm total measured evm vs. modulated output power vc1, vc2 = 4.5, 5.0 and 5.5v, vm12 = 3.3v f=2.45 ghz 0 1 2 3 4 5 6 02468 10 12 14 16 18 20 22 24 modulated output power (dbm) total measur ed evm (% ) 4.5 v 5.0 v 5.5 v 0.8% system level evm included vm=2.8v vm=2.9v vm=3.0v vm=3.1v vm=3.2v vm=3.3v
5 www.fairchildsemi.com RMPA2455 rev. d RMPA2455 2.4?.5 ghz 1 watt ingap hbt linear power ampli?r performance data 802.11g ofdm modulation (with 176 ms burst time, 100 ms idle time) 54 mbps data rate, 16.7 mhz bandwidth total bias current vs. modulated output power vc1, vc2=5. 0v, vm12 =2.8 to 3.3v f=2.45 ghz t=25c 0 50 100 150 200 250 300 02468 10 12 14 16 18 20 22 24 26 28 30 modulated output power (dbm) total bias curren t (ma ) vm=2.8v vm=2.9v vm=3.0v vm=3.1v vm=3.2v vm=3.3v modulated gain and tota l qu iescient current vs. mirror voltage (vm) 23 24 25 26 27 28 29 30 2.8 2.9 3 3.1 3.2 3.3 mirror voltage (volts) modulated gain (db) 20 40 60 80 100 120 140 160 total quiescen t current (ma) curren t gain gain vs. single tone output power vc1, vc2 = 5.0v, vm12 = 3.3v 23 24 25 26 27 28 29 30 31 32 33 468 10 12 14 16 18 20 22 24 26 28 30 32 single tone output power (dbm) gain (db) 2.4 ghz 2.45 ghz 2.5 ghz s-parameters vc=5.0v vm12=3.3v t=25c -30 -20 -10 0 10 20 30 40 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 frequency (ghz) sij (db) s11 s22 s21 single tone
6 www.fairchildsemi.com RMPA2455 rev. d RMPA2455 2.4?.5 ghz 1 watt ingap hbt linear power ampli?r evaluation board schematic pa ck ag e outline backside ground d front side view bottom view as viewed from bottom note: dimensions do not include protrusions or mold flash. these are not to exceed 0.006" (.155mm) on any side. detail a see detail a imensions in inches [mm] 2455 ywwx
7 www.fairchildsemi.com RMPA2455 rev. d RMPA2455 2.4?.5 ghz 1 watt ingap hbt linear power ampli?r evaluation board of materials evaluation board layout actual board size = 2.0" x 1.5" c7 c5 c1 l1 c6 c3 c2 r1 c4 l2
8 www.fairchildsemi.com RMPA2455 rev. d RMPA2455 2.4?.5 ghz 1 watt ingap hbt linear power ampli?r evaluation board turn-on sequence 1 recommended turn-on sequence: 1) connect common ground terminal to the ground (gnd) pin on the board. 2) apply low voltage 0.0 to +1.0 v to pin v l . 3) apply positive supply voltage vc1 (= 5.0v) to pin vc1 (?st stage collector). 4) apply positive supply voltage vc2 (= 5.0v) to pin vc2 (second stage collector). 5) apply positive bias voltage vm12 (= 3.3v) to pin vm12 (bias networks). 6) at this point, you should expect to observe the following posi- tive currents ?wing into the pins: 7) apply input rf power to sma connector pin rfin. currents in pins vc1 and vc2 will vary depending on the input drive level. 8) vary positive voltage v l on pin vreg from +0.5v to +2.4v to shut down the ampli?r or alter the power level. shut down cur- rent ?w into the pins: recommended turn-off sequence: use reverse order described in the turn-on sequence above. note: 1. turn on sequence is not critical and it is not necessary to sequence power sup- plies in actual system level design. pin current vm12 15.0 ?20.0 ma vc1 45.0 ?65.0 ma vc2 60.0 ?80.0 ma v l <1 na pin current vm12 <0.7 ma vc1 <1 na vc2 <1 na v l <0.25 ma
9 www.fairchildsemi.com RMPA2455 rev. d RMPA2455 2.4?.5 ghz 1 watt ingap hbt linear power ampli?r disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy f airchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? p acman? f ast ? f astr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? rev. i15 acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? f act? f act quiet series? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? silent switcher ? smart start? spm? s tealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? unifet? vcx? across the board. around the world.? the power franchise ? programmable active droop?
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